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Deformable ferrofluid-based millirobot with high motion accuracy and high output force

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (13)

The magnetically actuated robot has valuable potential in biomedicine, bioengineering, and biophysics for its capability to precisely manipulate parti......

GRIN metamaterial generalized Luneburg lens for ultra-long acoustic jet

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (14)

In this work, a 3D-printed mesoscale acoustic generalized Luneburg lens based on cylindrical metamaterial is proposed. Compared to isotropic lenses, w......

Investigation on band alignment of Bi2Se3-PbSe heterojunction

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (16)

In this Letter, in situ growth of the Bi2Se3-PbSe heterojunction was achieved by the molecular beam epitaxy process. An atomically abrupt heterointerf......

A bright source of telecom single photons based on quantum frequency conversion

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (17)

On-demand indistinguishable single-photon sources are essential for quantum networking and communication. Semiconductor quantum dots are among the mos......

Perspective on mode-division multiplexing

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (20)

We review the current status of mode-division multiplexing (MDM) techniques in fibers and on chips. Three system applications are introduced, includin......

Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (21)

Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5-5.9eV, has been proposed as a potential material for a high- perfo......

Highly efficient one-photon upconversion with cooperative enhancements of photon and phonon absorption in chlorophyll plexciton hybrids

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (22)

We have demonstrated greatly enhanced light harvesting and one-photon upconversion in the plexcitonic hybrids of chlorophyll molecules strongly couple......

Acoustic multi-layer Helmholtz resonance metamaterials with multiple adjustable absorption peaks

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (24)

The single Helmholtz resonator obtains only one absorption peak in the broad frequency range, which limits its application in reducing the noise with ......

Li-based selenized Cu2ZnSnS4 surface: Possible route to overcoming v(oc)-deficit of kesterite solar cells

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (25)

Usually, open-circuit voltage (V-oc) of thin film solar cells significantly depends on the band bending at the front interface of an absorber/ buffer.......

Experimental realization of noncyclic geometric gates with shortcut to adiabaticity in a superconducting circuit

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (25)

Possessing the noise-resilience feature, geometric phases have become important in robust quantum computation. Gates based on the Abelian and non-Abel......

Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf0.5Zr0.5O2 barrier

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (25)

Ferroelectric Hf0.5Zr0.5O2 films, 5.8 nm in thickness, were deposited on Nb:SrTiO3 semiconductor substrates to form a Pt/Hf0.5Zr0.5O2/Nb:SrTiO3 metal/......

Ultra-bright pure green perovskite light-emitting diodes

期刊: APPLIED PHYSICS LETTERS, 2021; 118 (26)

Inorganic perovskites, such as CsPbX3 (X = Cl, Br, I), have attracted attention due to their excellent thermal stabilities and high photoluminescence ......

The interference properties of single-photon vortex beams in Mach-Zehnder interferometer

期刊: APPLIED PHYSICS LETTERS, 2021; 119 (1)

Orbital angular momentum (OAM) is a unique degree of freedom for vortex beams. It is very important to study the interference of vortex beams carrying......

Dichroism and birefringence optical atomic magnetometer with or without self-generated light squeezing

期刊: APPLIED PHYSICS LETTERS, 2021; 119 (5)

An atomic magnetometer detects atomic responses to the magnetic field, and its sensitivity is ultimately limited by quantum noise fluctuations. For ma......

Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

期刊: APPLIED PHYSICS LETTERS, 2021; 119 (5)

The surface of the p-GaN layer in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) can be reinforced with enhanced immunity to hot ......

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