Skip Over Navigation Links
JOURNAL OF APPLIED PHYSICS, 2012; 111 (7):

Tunable positive magnetoresistance effect of Co-doped amorphous carbon films

Jiang, YC; Wu, ZP; Bao, W; Xu, SJ; Gao, J
Gao, J (reprint author), Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China.
分享到:
Abstract
Co-doped amorphous carbon (a-C:Co) films were deposited on n-type Si substrates by pulsed-laser deposition method. A positive magnetoresistance (PMR) effect has been observed after Co doped into a-C films. Such a PMR is tuned by the bias voltage and reaches a peak at a particular voltage, as observed from the Current-voltage relations of the a-C:Co/Si junctions at various magnetic fields. MR-H characteristics were further studied at the temperatures of 65 K, which showed that under the reverse electric field the a-C:Co/Si junctions had a colossal PMR (over 100%). Raman spectra results demonstrate that Co doping favors the formation of graphitic sp(2) sites. The mechanism of the PMR effect is attributed to the interactions between the applied magnetic field and Co ions, which leads to the transition from sp(2) sites to sp(3) sites and increase the resistance. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675180]

JOURNAL OF APPLIED PHYSICS 影响因子:2.21    (投稿经验 | MedSci指数 | 杂志信息 )
求助全文:在线获取全文     服务介绍
原文查看:Tunable positive magnetoresistance effect of Co-doped amorphous carbon films



相关的研究进展


联系我们


联系人:韩小姐 沈小姐
电话:400-6408-988
免费电话:4006408988
传真:021-64085875
电邮:editing@medsci.cn
客服MSN:editing@bioon.com
地址:上海市中山西路2020号华宜大厦1号楼801(200234)
在线咨询:客户留言
web对话
live chat