Semiconductor-metal transition induced by combined electric field and external strain in bilayer phosphorene

Feng, XQ; Lu, HX; Shi, DN; Jia, JM; Wang, CS

Feng, XQ; Shi, DN (corresponding author), Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Jiangsu, Peoples R China.; Feng, XQ; Shi, DN (corresponding author), Nanjing Univ Aeronaut & Astronaut, Key Lab Intelligent Nano Mat & Devices, Minist Educ, Nanjing 210016, Jiangsu, Peoples R China.; Jia, JM (corresponding author), Huaiyin Normal Univ, Sch Phys & Elect Elect Engn, Huaian 223300, Jiangsu, Peoples R China.

SOLID STATE COMMUNICATIONS, 2021; 337 ():

Abstract

The gap modulation by effectively external control is an intriguing feature of the black phosphorene which may enable a flexible design and optimizati......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索