Monolithic integration of GaAs p-i-n photodetectors grown on 300 mm silicon wafers

Mehdi, H; Martin, M; David, S; Hartmann, JM; Moeyaert, J; Touraton, ML; Jany, C; Virot, L; Da Fonseca, J; Coignus, J; Blachier, D; Baron, T

Baron, T (corresponding author), Univ Grenoble Alpes, LTM, Grenoble INP, CNRS,CEA LETI Minatec, F-38000 Grenoble, France.

AIP ADVANCES, 2020; 10 (12):

Abstract

Vertical GaAs p-i-n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodete......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索