PRODUCER BARC OPEN CHALLENGES AND THE BASELINE SET UP FOR FINFET

Huang, S; Huang, Y; Wang, J; Ge, Q

Huang, S (reprint author), Appl Mat China, Shanghai 201204, Peoples R China.

2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017), 2017; ( ):

Abstract

Multiple Vt tuning is necessary for SOC (system-on-a-chip) FinFET devices at 16nm technology node and beyond. To achieve this, BARC open, as a mask, f......

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