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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2017 | 2 |
2018 | 2 |
2020 | 1 |
2021 | 2 |
2024 | 0 |
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Page 1
GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.
IEEE Electron Device Lett. 2018 Feb;39(2):184-187. doi: 10.1109/LED.2017.2785785. Epub 2017 Dec 21.
IEEE Electron Device Lett. 2018.
PMID: 29720783
Free PMC article.
In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability.
Cardenas JA, Lu S, Williams NX, Doherty JL, Franklin AD.
Cardenas JA, et al.
IEEE Electron Device Lett. 2021 Mar;42(3):367-370. doi: 10.1109/led.2021.3055787. Epub 2021 Feb 1.
IEEE Electron Device Lett. 2021.
PMID: 33746353
Free PMC article.
Item in Clipboard
A sub-1V, microwatt power-consumption iontronic pressure sensor based on organic electrochemical transistors.
Wang X, Meng X, Zhu Y, Ling H, Chen Y, Li Z, Hartel MC, Dokmeci MR, Zhang S, Khademhosseini A.
Wang X, et al.
IEEE Electron Device Lett. 2021 Jan;42(1):46-49. doi: 10.1109/led.2020.3042310. Epub 2020 Dec 3.
IEEE Electron Device Lett. 2021.
PMID: 33746352
Free PMC article.
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CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications.
Fleischer DA, Shekar S, Dai S, Field RM, Lary J, Rosenstein JK, Shepard KL.
Fleischer DA, et al.
IEEE Electron Device Lett. 2018 Jul;39(7):931-934. doi: 10.1109/LED.2018.2844545. Epub 2018 Jun 6.
IEEE Electron Device Lett. 2018.
PMID: 30666084
Free PMC article.
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Impact of RRAM Read Fluctuations on the Program-Verify Approach.
Nminibapiel DM, Veksler D, Kim JH, Shrestha PR, Campbell JP, Ryan JT, Baumgart H, Cheung KP.
Nminibapiel DM, et al.
IEEE Electron Device Lett. 2017 Jun;38(6):736-739. doi: 10.1109/LED.2017.2696002. Epub 2017 May 2.
IEEE Electron Device Lett. 2017.
PMID: 28890601
Free PMC article.
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