Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction

Omanakuttan, G; Stergiakis, S; Sahgal, A; Sychugov, I; Lourdudoss, S; Sun, YT

Sun, YT (reprint author), Royal Inst Technol KTH, Sch Informat & Commun Technol, Dept Mat & Nano Phys, Electrum 229, S-16440 Kista, Sweden.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017; 214 (3):

Abstract

The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/......

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