Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER)

Lee, J; Park, T; Ahn, H; Kwak, J; Moon, T; Shin, C

Moon, T; Shin, C (corresponding author), Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea.; Moon, T (corresponding author), Sungkyunkwan Univ, Dept Artificial Intelligence, Suwon 16419, South Korea.

ELECTRONICS, 2021; 10 (4):

Abstract

As the physical size of MOSFET has been aggressively scaled-down, the impact of process-induced random variation (RV) should be considered as one of t......

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