2-D Strain FET (2D-SFET) Based SRAMs-Part I: Device-Circuit Interactions

Thakuria, N; Schulman, D; Das, S; Gupta, SK

Thakuria, N (corresponding author), Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020; 67 (11): 4866

Abstract

In this article, we analyze the characteristics of a recently conceived steep switching device 2-D Strain FET (2D-SFET) and present its circuit implic......

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