Atomic Layer Deposition of GeTe and Ge-Sb-Te Films Using HGeCl3, Sb(OC2H5)(3), and {(CH3)(3)Si}(2)Te and Their Reaction Mechanisms

Gwon, T; Eom, T; Yoo, S; Yoo, C; Park, ES; Kim, S; Kim, MS; Buchanan, I; Xiao, M; Ivanov, S; Hwang, CS

Hwang, CS (reprint author), Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea.; Hwang, CS (reprint author), Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea.

CHEMISTRY OF MATERIALS, 2017; 29 (19): 8065

Abstract

In this paper, a new atomic layer deposition (ALD) process for depositing binary Ge-Te and ternary Ge-Sb-Te thin films is reported, where HGeCl3 and (......

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