Effects of Parasitic Inductance on Performance of 600-V GaN Devices

Sellers, AJ; Tine, C; Kini, RL; Hontz, MR; Khanna, R; Lemmon, AN; Shahabi, A; New, C

Khanna, R (reprint author), Univ Toledo, Elect Engn & Comp Sci, 2801 W Bancroft St, Toledo, OH 43606 USA.

2017 IEEE ELECTRIC SHIP TECHNOLOGIES SYMPOSIUM (ESTS), 2017; ( ): 50

Abstract

This paper presents a comparison of two identical gallium nitride (GaN) cascode transistors with different TO-220 packaging configurations. The transi......

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