600 V GaN vertical V-trench MOSFET with MBE regrown channel

Li, WS; Nomoto, K; Lee, K; Islam, SM; Hu, ZY; Zhu, MD; Gao, X; Pilla, M; Jena, D; Xing, HG

Li, WS (reprint author), Cornell Univ, Ithaca, NY 14850 USA.

2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017; ( ):

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