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Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (2)

Integrated circuit (IC) industry has fully considered the fact that the Moore's Law is slowing down or ending. Alternative solutions are highly and ur......

A complete small-signal HBT model including AC current crowding effect

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (5)

An improved small-signal equivalent circuit of HBT concerning the AC current crowding effect is proposed in this paper. AC current crowding effect is ......

Surface-enhanced Raman spectroscopy chips based on two-dimensional materials beyond graphene

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (5)

Surface-enhanced Raman spectroscopy (SERS) based on two-dimensional (2D) materials has attracted great attention over the past decade. Compared with m......

Fiber coupled high count-rate single-photon generated from InAs quantum dots

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (7)

In this work, we achieve high count-rate single-photon output in single-mode (SM) optical fiber. Epitaxial and dilute InAs/GaAs quantum dots (QDs) are......

The scanning tunneling microscopy and spectroscopy of GaSb1- (x) Bi (x) films of a few-nanometer thickness grown by molecular beam epitaxy

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (9)

The ultrahigh vacuum scanning tunneling microscope (STM) was used to characterize the GaSb1- (x) Bi (x) films of a few nanometers thickness grown by t......

Mobility enhancement techniques for Ge and GeSn MOSFETs

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (2)

The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly difficult. The application of high mobility cha......

A review of manufacturing technologies for silicon carbide superjunction devices

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (6)

Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off. It has become a mainstream technolog......

Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (1)

In this work, electrochemical metallization memory (ECM) devices with an Ag/AgInSbTe (AIST)/amorphous carbon (a-C)/Pt structure were irradiated with 1......

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (2)

The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and o......

Synthesis of two-dimensional/one-dimensional heterostructures with tunable width

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (9)

Two-dimensional/one-dimensional (2D/1D) heterostructures as a new type of heterostructure have been studied for their unusual properties and promising......

Regulation of the order-disorder phase transition in a Cs2NaFeCl6 double perovskite towards reversible thermochromic application

期刊: JOURNAL OF SEMICONDUCTORS, 2021; 42 (7)

Multifunctional lead-free double perovskites demonstrate remarkable potential towards applications in various fields. Herein, an environmentally-frien......

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