Mott-transition-based RRAM

Wang, Y; Kang, KM; Kim, M; Lee, HS; Waser, R; Wouters, D; Dittmann, R; Yang, JJ; Park, HH

Park, HH (reprint author), Yonsei Univ, Dept Mat Sci & Engn, Mat Characterizat Lab, 50 Yonsei Ro, Seoul 03722, South Korea.

MATERIALS TODAY, 2019; 28 (): 63

Abstract

Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural network......

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