Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Liao, YQ; Chen, T; Wang, J; Ando, Y; Cai, WT; Yang, X; Watanabe, H; Hirotani, J; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

Liao, YQ (corresponding author), Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, Japan.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2021; 60 (7):

Abstract

An optimized top-down approach was utilized to fabricate vertical GaN-on-GaN nanowire Schottky barrier diodes (NWSBDs) in this letter. The suppressed ......

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