E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Jia, LF; Zhang, L; Xiao, JP; Cheng, Z; Lin, DF; Ai, YJ; Zhao, JC; Zhang, Y

Zhang, Y (corresponding author), Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China.; Zhang, Y (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China.

MICROMACHINES, 2021; 12 (6):

Abstract

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commerci......

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