Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs

Han, DX; Ruiz, DC; Bonomo, G; Saranovac, T; Ostinelli, OJS; Bolognesi, CR

Bolognesi, CR (corresponding author), Swiss Fed Inst Technol, Dept Informat Technol & Elect Engn, CH-8092 Zurich, Switzerland.

IEEE ELECTRON DEVICE LETTERS, 2020; 41 (9): 1320

Abstract

GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low ......

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