Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

Fu, JZ; Fouquet, F; Kadi, M; Dherbecourt, P

Fu, JZ (reprint author), Normandie Univ, UNIROUEN, ESIGELE, IRSEEM EA 4553, F-76000 Rouen, France.

MICROELECTRONICS RELIABILITY, 2018; 88-90 (): 652

Abstract

In this article, a repetitive and non-destructive short-circuit aging test is developed to characterize the electrical parameters evolutions of a 600 ......

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