Transparent silicon carbide/tunnel SiO2 passivation for c-Si solar cell front side: Enabling J(sc) > 42 mA/cm(2) and iV(oc) of 742 mV

Pomaska, M; Kohler, M; Moya, PP; Zannchiy, A; Singh, A; Kim, DY; Isabelle, O; Zeman, M; Li, SH; Qiu, KF; Eberst, A; Smirnov, V; Finger, F; Rau, U; Ding, KN

Pomaska, M (corresponding author), Forschungszentrum Julich, IEK5 Photovolta, Wilhelm Johnen Str, D-52425 Julich, Germany.

PROGRESS IN PHOTOVOLTAICS, 2020; 28 (4): 321

Abstract

N-type microcrystalline silicon carbide (mu c-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline......

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