A Reconfigurable Non-Uniform Power-Combining V-Band PA With+17.9 dBm P-sat and 26.5% PAE in 16-nm FinFET CMOS

Chu, KD; Callender, S; Wang, YJ; Rudell, JC; Pellerano, S; Hull, C

Chu, KD (corresponding author), Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA.; Callender, S (corresponding author), Intel Corp, Hillsboro, OR 97124 USA.; Wang, YJ (corresponding author), South China Univ Technol, Sch Microelect, Guangzhou 511442, Peoples R China.

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021; 56 (5): 1502

Abstract

This article presents the design of a dual-mode V-band power amplifier (PA) that enhances the efficiency at power back-off (PBO) using load modulation......

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