Properties of Si nanostructural modification on Si (111) surface

Dong, YH; Ding, XP; Zang, QJ; Su, WS; Lu, WC

Lu, WC (corresponding author), Jilin Univ, Inst Theoret Chem, Changchun 130021, Jilin, Peoples R China.; Lu, WC (corresponding author), Qingdao Univ, Coll Phys, Qingdao 266071, Shandong, Peoples R China.; Su, WS (corresponding author), Natl Taiwan Sci Educ Ctr, Taipei 11165, Taiwan.; Su, WS (corresponding author), Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 10608, Taiwan.; Su, WS (corresponding author), Taiwan Semicond Res Inst, Natl Appl Res Labs, Hsinchu 30078, Taiwan.

CHINESE JOURNAL OF PHYSICS, 2020; 67 (): 69

Abstract

Si nanostructures (Si-NSs) epitaxially grown or adsorbed on Si (111) surface, with various shapes including pit-like, bars, islands, hill-like, diamon......

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