Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Sun, Y; Kang, XW; Zheng, YK; Lu, J; Tian, XL; Wei, K; Wu, H; Wang, WB; Liu, XY; Zhang, GQ

Kang, XW (reprint author), Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.; Zhang, GQ (reprint author), Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands.

ELECTRONICS, 2019; 8 (5):

Abstract

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applica......

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