Multifunctional Optoelectronic Random Access Memory Device Based on Surface-Plasma-Treated Inorganic Halide Perovskite

Liu, Q; Yue, WJ; Li, Y; Wang, WX; Xu, L; Wang, YQ; Gao, S; Zhang, CW; Kan, H; Li, C

Li, Y (corresponding author), Univ Jinan, Sch Informat Sci & Engn, Jinan 250022, Peoples R China.; Li, Y (corresponding author), Univ Jinan, Shandong Prov Key Lab Network Based Intelligent C, Jinan 250022, Peoples R China.

ADVANCED ELECTRONIC MATERIALS, 2021; 7 (7):

Abstract

Emerging optoelectronic resistive random access memory (RRAM) devices, enabled by optoelectronic materials with excellent properties have considerable......

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