Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration

Li, H; Zhao, XR; Su, WZ; Sun, K; Zheng, TQ; You, XJ

Li, H (reprint author), Beijing Jiaotong Univ, Sch Elect Engn, Beijing 100044, Peoples R China.

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2017; 64 (11): 8992

Abstract

To solve the simulation convergence problem of enhancement mode gallium nitride high-electron mobility transistor (GaN HEMT) models, this paper propos......

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