Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies

Sharma, YK; Mumby-Croft, P; Ngwendson, L; Coulbeck, L; Birkett, M; Jiang, H; Wang, Y; Deviny, I

Sharma, YK (reprint author), Dynex Semicond Ltd, Doddington Rd, Lincoln, England.

2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE), 2018; ():

Abstract

In this paper the electrical test results of 3.3kV Si-IGBT/4HSiC-Schottky hybrid substrates (Hybrid SiC substrates) and modules are presented. Compari......

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