Bulk beta-Ga2O3 single crystals doped with Ce, Ce plus Si, Ce plus Al, and Ce plus Al plus Si for detection of nuclear radiation

Galazka, Z; Schewski, R; Irmscher, K; Drozdowski, W; Witkowski, ME; Makowski, M; Wojtowicz, AJ; Hanke, IM; Pietsch, M; Schulz, T; Klimm, D; Ganschow, S; Dittmar, A; Fiedler, A; Schroeder, T; Bickermann, M

Galazka, Z (corresponding author), Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany.

JOURNAL OF ALLOYS AND COMPOUNDS, 2020; 818 ():

Abstract

beta-Ga2O3 is an emerging ultra-wide bandgap (4.9 eV) oxide semiconductor that additionally scintillates under gamma excitation. A unique combination ......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索