Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV

Hu, ZY; Nomoto, K; Li, WS; Tanen, N; Sasaki, K; Kuramata, A; Nakamura, T; Jena, D; Xing, HG

Hu, ZY (reprint author), Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA.; Xing, HG (reprint author), Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Sch Elect & Comp Engn, Dept Mat Sci & Engn, Ithaca, NY 14853 USA.

IEEE ELECTRON DEVICE LETTERS, 2018; 39 (6): 869

Abstract

High-voltage vertical Ga2O3 MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga2O3 (001) substrates. The low charge ......

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