Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Yurasov, DV; Novikov, AV; Baidakova, NA; Aleshkin, VY; Bushuykin, PA; Andreev, BA; Yunin, PA; Drozdov, MN; Yablonskiy, AN; Dubinov, AA; Krasilnik, ZF

Yurasov, DV (corresponding author), Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia.

JOURNAL OF APPLIED PHYSICS, 2020; 127 (16):

Abstract

Comparative studies of the bandgap narrowing in antimony doped Ge layers grown on Si(001) and Ge(001) substrates are reported. The doping level in Ge:......

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