2.6-GHz Integrated LDMOS Doherty Power Amplifier for 5G Basestation Applications

Ahmed, M; Hue, X; Szymanowski, M; Uscola, R; Staudinger, J; Kitchen, J

Ahmed, M (corresponding author), NXP Semicond, Radio Power RP Div, Chandler, AZ 85226 USA.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021; 31 (7): 881