High efficiency 33-37 GHz 20 W GaN HEMT power amplifier MMIC

Tao, HQ; Hong, W; Zhang, B; Yu, XM

Tao, HQ (reprint author), Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210016, Jiangsu, Peoples R China.

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2017; 59 (10): 2441

Abstract

A high efficiency Ka-band GaN high power amplifier (HPA) utilizing 0.15-mu m gallium nitride (GaN) high electron mobility transistor (HEMT) technology......

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