Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs

He, HY; Liu, Y; Yin, JL; Wang, XL; Lin, XN; Zhang, SD

He, HY (corresponding author), Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

SOLID-STATE ELECTRONICS, 2021; 181 ():

Abstract

The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius and the nonArrhenius dependence at the high temperature an......

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