Effect of MACE parameters on length of porous silicon nanowires (PSiNWs)

Singh, N; Sahoo, MK; Kale, PG

Kale, PG (reprint author), NIT Rourkela, Dept Elect Engn, Rourkela 769008, Odisha, India.

JOURNAL OF CRYSTAL GROWTH, 2018; 496 (): 10

Abstract

Silicon nanowire-based devices have properties such as optical, electronic, and physical that can outperform their traditional counterparts in various......

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