The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Li, YF; Hu, XT; Song, YM; Su, ZL; Jia, HQ; Wang, WX; Jiang, Y; Chen, H

Li, YF (通讯作者)，Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy,Beijing Natl Lab Condens, Beijing Key Lab New Energy Mat & Devices, Beijing 100190, Peoples R China.;Jiang, Y (通讯作者)，Univ Chinese Acad Sci, Ctr Mat & Optoelect Engn, Beijing 100049, Peoples R China.;Chen, H (通讯作者)，Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022; 141 ():

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