Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers-MedSci.cn

Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers

Datsenko, OI; Golovynskyi, S; Suarez, I; Munoz-Matutano, G; Trevisi, G; Frigeri, P; Seravalli, L

Golovynskyi, S (通讯作者)，Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China.

MICROELECTRONIC ENGINEERING, 2022; 263 ():

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