Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs

Zou, WS; Chen, JW; Liu, JB; Ma, J

Ma, J (通讯作者)，Southern Univ Sci & Technol SUSTech, Dept Elect & Elect Engn, Shenzhen, Peoples R China.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2023; 62 (9):

Abstract

This work presented the reverse leakage current (I-R) mechanisms in multi-channel GaN-on-Si Schottky barrier diodes (SBDs). The device showed excellen......

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