A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

Aziz, T; Sun, Y; Wu, ZH; Haider, M; Qu, TY; Khan, A; Zhen, C; Liu, Q; Cheng, HM; Sun, DM

Sun, DM (corresponding author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Liu, Q (corresponding author), Fudan Univ, Frontier Inst Chip & Syst, 2005 Songhu Rd, Shanghai 200433, Peoples R China.

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2021; 86 (): 151

Abstract

Metal phthalocyanine is considered one of the most promising candidates for the design and fabrication of flexible resistive random access memory (RRA......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索