Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Martinella, C; Ziemann, T; Stark, R; Tsibizov, A; Voss, KO; Alia, RG; Kadi, Y; Grossner, U; Javanainen, A

Martinella, C (corresponding author), CERN, Dept Engn, CH-1211 Geneva, Switzerland.

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020; 67 (7): 1381

Abstract

Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-......

Full Text Link