Mechanically Gated Transistor

Huang, BY; Yu, Y; Zhang, FY; Liang, YH; Su, SY; Zhang, M; Zhang, Y; Li, CJ; Xie, SH; Li, JY

Huang, BY; Li, JY (通讯作者),Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China.;Huang, BY; Li, JY (通讯作者),Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China.

ADVANCED MATERIALS, 2023; ():

Abstract

Silicon-based field effect transistors have underpinned the information revolution in the last 60 years, and there is a strong desire for new material......

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