Scalability of Sulfur-Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Jia, SJ; Li, HL; Liu, Q; Song, ZT; Zhu, M

Zhu, M (corresponding author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021; 15 (6):

Abstract

A two-terminal selector is an essential element for high-density 3D stackable memory arrays. Suppressing sneak current, the device also needs to provi......

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