28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

Rostomyan, N; Ozen, M; Asbeck, P

Rostomyan, N (reprint author), Univ Calif San Diego, Dept Elect Engn & Comp Sci, La Jolla, CA 92161 USA.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2018; 28 (5): 446

Abstract

A single-stage, symmetric Doherty power amplifier (PA) in 45 nm CMOS silicon on insulator at 28 GHz is presented. The PA achieves a saturated output p......

Full Text Link