Metric or Quantifying Switching Variability in Resistive Switching Devices

Tan, ZJ; Fang, NX

Fang, NX (reprint author), MIT, Dept Mech Engn, Cambridge, MA 02139 USA.

IEEE ELECTRON DEVICE LETTERS, 2019; 40 (9): 1546

Abstract

Resistive switching or resistive RAM devices typically have large variability in cycle-to-cycle and deviceto-device switching. It is a major aspect of......

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