Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis

Wang, H; Liu, YH; Ji, FW; Li, H; Li, BK; Tang, X

Tang, X (corresponding author), Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China.; Li, BK (corresponding author), Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2021; 60 (10):

Abstract

A normally-off p-GaN/AlGaN/GaN high-electron-mobility transistor (p-GaN HEMTs) with a semitransparent gate electrode was investigated. Under forward g......

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