Design of a Broadband Harmonically-Tuned Power Amplifier with Gate-Source Parasitic Compensation

Cheng, ZQ; Xu, L; Liu, GH; Feng, H; Gao, S

Cheng, ZQ (reprint author), Hangzhou Dianzi Univ, Hangzhou, Zhejiang, Peoples R China.; Cheng, ZQ (reprint author), Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China.

MICROWAVE JOURNAL, 2019; 62 (11): 96

Abstract

A 1.5 to 2.6 GHz broadband power amplifier (PA) based on a GaN HEMT is designed to achieve high-power and efficiency. The transistor's gate-source par......

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