GaAsBi Quantum Dots for 1.55 mu m Laser Diode

Zhang, MX; Zhang, LY; Zhang, ZY; Yu, P; Yao, S

Zhang, LY (corresponding author), Univ Shanghai Sci & Technol, Dept Phys, Shanghai 200093, Peoples R China.

ELECTRONIC MATERIALS LETTERS, 2021; 17 (2): 181

Abstract

Bi incorporations can reduce the bandgap of GaAs1-xBix. With a Bi content of 10.5%, GaAsBi is predicted to emit light at 1.55 mu m. However, high Bi i......

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