Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

Ruiz, A; Couso, C; Seoane, N; Porti, M; Garcia-Loureiro, AJ; Nafria, M

Ruiz, A (corresponding author), Univ Autonoma Barcelona, Elect Engn Dept, Barcelona 08193, Spain.

IEEE ACCESS, 2021; 9 (): 90568

Abstract

In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impa......

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