Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Wu, LM; Wang, AW; Shi, JA; Yan, JH; Zhou, Z; Bian, C; Ma, JJ; Ma, RS; Liu, HT; Chen, JC; Huang, Y; Zhou, W; Bao, LH; Ouyang, M; Pennycook, SJ; Pantelides, ST; Gao, HJ

Bao, LH; Gao, HJ (corresponding author), Chinese Acad Sci, Inst Phys, Beijing, Peoples R China.; Bao, LH; Gao, HJ (corresponding author), Univ Chinese Acad Sci, Chinese Acad Sci, Beijing, Peoples R China.; Bao, LH; Gao, HJ (corresponding author), Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing, Peoples R China.; Bao, LH; Gao, HJ (corresponding author), Songshan Lake Mat Lab, Dongguan, Guangdong, Peoples R China.; Ouyang, M (corresponding author), Univ Maryland, Dept Phys, Co

NATURE NANOTECHNOLOGY, 2021; 16 (8): 882

Abstract

The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have man......

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