Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs-MedSci.cn

Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs

Mukherjee, J; Chaubey, RK; Rawal, DS; Dhaka, RS

Rawal, DS (通讯作者)，DRDO, Solid State Phys Lab, New Delhi 110054, India.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022; 137 ():

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