Advanced atomic layer deposition (ALD): controlling the reaction kinetics and nucleation of metal thin films using electric-potential-assisted ALD

Han, JW; Jin, HS; Kim, YJ; Heo, JS; Kim, WH; Ahn, JH; Park, TJ

Kim, WH; Ahn, JH; Park, TJ (通讯作者)，Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea.

JOURNAL OF MATERIALS CHEMISTRY C, 2023; 11 (11): 3743

Abstract

Ru thin films are grown using electric-potential-assisted ALD (EA-ALD), modifying the thin film growth behavior with an electric potential applied to ......

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