Origin of the Band Gap Reduction of In-Doped beta-Ga2O3

He, W; Wang, ZX; Zheng, T; Wang, LY; Zheng, SW

Zheng, SW (corresponding author), South China Normal Univ, Inst Semicond Sci & Technol, Guangzhou 510631, Peoples R China.

JOURNAL OF ELECTRONIC MATERIALS, 2021; 50 (7): 3856

Abstract

The structural and electronic properties of In-doped beta-Ga2O3 are calculated by the GGA + U method based on density functional theory. 76 possible s......

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