Vertical 4H-SiC n-i-p-n APDs With Partial Trench Isolation

Cai, XL; Li, LH; Lu, H; Zhou, D; Xu, WZ; Chen, DJ; Ren, FF; Zhang, R; Zheng, YD; Li, GL

Lu, H (reprint author), Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China.

IEEE PHOTONICS TECHNOLOGY LETTERS, 2018; 30 (9): 805

Abstract

In this letter, in order to improve avalanche characteristics in deep ultraviolet range and enhance fill factor, vertical 4H-SiC n-i-p-n avalanche pho......

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